Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch
نویسندگان
چکیده
منابع مشابه
Gallium Nitride Photoconductive Detectors
Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...
متن کاملPhotoconductive Semiconductor Switches: Laser Q-switch Trigger and Switch-Trigger Laser Integration
This report provides a summary of the Pulser In a Chip 9000-Discretionary LDRD. The program began in January of 1997 and concluded in September of 1997. The over-arching goal of this LDRD is to study whether laser diode triggered photoconductive semiconductor switches (PCSS) can be used to activate electro-optic devices such as Q-switches and Pockels cells and to study possible laser diode/ swi...
متن کاملMicrolens coupled interdigital photoconductive switch
Gabor Matthäus, Stefan Nolte, Rico Hohmuth, Martin Voitsch, Wolfgang Richter, Boris Pradarutti, Stefan Riehemann, Gunther Notni, and Andreas Tünnermann Institute of Applied Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, Jena D-07743, Germany BATOP GmbH, Wildenbruchstrasse 15, Jena D-07745, Germany Fraunhofer Institute for Applied Optics and Precision Engineering, Albert-Einstein...
متن کاملPhotoconductive terahertz generation from textured semiconductor materials
Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating-as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurr...
متن کاملFluorescence decay time of single semiconductor nanocrystals.
We present fluorescence decay measurements of single ZnS covered CdSe nanocrystals. It is shown that the fluorescence decay time is fluctuating during the investigation leading to a multiexponential decay even for a single nanocrystal. In combination with measurements of the fluorescence blinking behavior we find that a high fluorescence intensity is correlated with a long fluorescence decay ti...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Optics Letters
سال: 2018
ISSN: 0146-9592,1539-4794
DOI: 10.1364/ol.43.003929